Low

NXP  PMF280UN,115  MOSFET Transistor, N Channel, 200 mA, 20 V, 0.28 ohm, 4.5 V, 700 mV

NXP PMF280UN,115
Technical Data Sheet (90.11KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The PMF280UN,115 is a N-channel enhancement-mode ultra-low level FET in a plastic package using TrenchMOS® technology. It is suitable for use in driver circuits and switching in portable appliances applications.
  • Surface-mount package
  • Footprint 40% smaller than SOT23
  • Low ON-state resistance
  • Low threshold voltage
  • -55 to 150°C Junction temperature range

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
200mA
Drain Source Voltage Vds:
20V
On Resistance Rds(on):
0.28ohm
Rds(on) Test Voltage Vgs:
4.5V
Threshold Voltage Vgs:
700mV
Power Dissipation Pd:
560mW
Transistor Case Style:
SOT-323
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Computers & Computer Peripherals;
  • Communications & Networking;
  • Consumer Electronics;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Malaysia

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000006