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NXP  PMGD280UN,115  Dual MOSFET, Dual N Channel, 200 mA, 20 V, 0.28 ohm, 4.5 V, 700 mV

NXP PMGD280UN,115
Technical Data Sheet (94.02KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The PMGD280UN,115 is a dual N-channel enhancement-mode FET in a surface-mount plastic package using TrenchMOS™ technology. It is suitable for driver circuits and switching in portable appliances applications. The device offers 40% smaller footprint.
  • Fast switching speed
  • Low ON-state resistance
  • Low threshold voltage

Product Information

Transistor Polarity:
Dual N Channel
Continuous Drain Current Id:
200mA
Drain Source Voltage Vds:
20V
On Resistance Rds(on):
0.28ohm
Rds(on) Test Voltage Vgs:
4.5V
Threshold Voltage Vgs:
700mV
Power Dissipation Pd:
400mW
Transistor Case Style:
SOT-363
No. of Pins:
6Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial;
  • Portable Devices;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Malaysia

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000006