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NXP  PMGD780SN,115  Dual MOSFET, Dual N Channel, 300 mA, 60 V, 0.78 ohm, 10 V, 2 V

NXP PMGD780SN,115
Technical Data Sheet (216.52KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The PMGD780SN,115 is a dual N-channel enhancement-mode FET in a surface-mount plastic package using TrenchMOS™ technology. It is suitable for driver circuits and switching in portable appliances applications. The device offers 40% smaller footprint.
  • Fast switching speed
  • Low ON-state resistance

Product Information

Transistor Polarity:
Dual N Channel
Continuous Drain Current Id:
300mA
Drain Source Voltage Vds:
60V
On Resistance Rds(on):
0.78ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
2V
Power Dissipation Pd:
410mW
Transistor Case Style:
SOT-363
No. of Pins:
6Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial;
  • Portable Devices;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Malaysia

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000006