Low

NXP  PMN45EN,135  MOSFET Transistor, N Channel, 3 A, 30 V, 0.032 ohm, 10 V, 1.5 V

NXP PMN45EN,135
Technical Data Sheet (227.73KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The PMN45EN,135 is a N-channel enhancement-mode FET in a plastic package using TrenchMOS™ technology. It is suitable for use in battery powered motor control, high speed switch in set top box power supplies and driver FET in DC to DC converter applications.
  • Very fast switching
  • Low threshold voltage
  • Surface-mount package
  • -55 to 150°C Junction temperature range

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
3A
Drain Source Voltage Vds:
30V
On Resistance Rds(on):
0.032ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
1.5V
Power Dissipation Pd:
1.75W
Transistor Case Style:
SOT-457
No. of Pins:
6Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

Find similar products  grouped by common attribute

Applications

  • Power Management;
  • Motor Drive & Control;
  • Computers & Computer Peripherals;
  • Portable Devices;
  • Consumer Electronics;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Malaysia

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000006