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NXP  PMR280UN,115  MOSFET Transistor, N Channel, 200 mA, 20 V, 0.28 ohm, 4.5 V, 700 mV

NXP PMR280UN,115
Technical Data Sheet (205.06KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The PMR280UN,115 is a N-channel enhancement-mode FET in ultra-small surface-mount plastic package using TrenchMOS® technology. It is suitable for use in driver circuits and switching in portable appliances.
  • Footprint 63% smaller than SOT23
  • Low ON-state resistance
  • Low threshold voltage
  • -55 to 150°C Junction temperature range

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
200mA
Drain Source Voltage Vds:
20V
On Resistance Rds(on):
0.28ohm
Rds(on) Test Voltage Vgs:
4.5V
Threshold Voltage Vgs:
700mV
Power Dissipation Pd:
530mW
Transistor Case Style:
SOT-416
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Portable Devices;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Malaysia

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000006