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NXP  PMR670UPE  MOSFET Transistor, P Channel, -480 mA, -20 V, 0.67 ohm, -4.5 V, -800 mV

NXP PMR670UPE
Technical Data Sheet (179.65KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The PMR670UPE is a P-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, high-speed line driver, High-side load-switch and switching circuit applications.
  • Very fast switching
  • ESD protection up to 2kV
  • AEC-Q101 qualified
  • -55 to 150°C Junction temperature range

Product Information

Transistor Polarity:
P Channel
Continuous Drain Current Id:
-480mA
Drain Source Voltage Vds:
-20V
On Resistance Rds(on):
0.67ohm
Rds(on) Test Voltage Vgs:
-4.5V
Threshold Voltage Vgs:
-800mV
Power Dissipation Pd:
250mW
Transistor Case Style:
SOT-416
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Automotive;
  • Power Management;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Malaysia

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000001

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