Low

NXP  PMV30UN,215  MOSFET Transistor, N Channel, 2 A, 20 V, 0.03 ohm, 4.5 V, 700 mV

NXP PMV30UN,215
Technical Data Sheet (238.09KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The PMV30UN,215 is a N-channel enhancement-mode ultra-low level FET in a plastic package using TrenchMOS® technology. It is suitable for use in battery management and high-speed switching applications.
  • Suitable for high frequency applications due to fast switching characteristics
  • Surface-mount package
  • -55 to 150°C Junction temperature range

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
2A
Drain Source Voltage Vds:
20V
On Resistance Rds(on):
0.03ohm
Rds(on) Test Voltage Vgs:
4.5V
Threshold Voltage Vgs:
700mV
Power Dissipation Pd:
1.9W
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000006