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NXP  PMZ250UN,315  MOSFET Transistor, N Channel, 200 mA, 20 V, 0.25 ohm, 4.5 V, 700 mV

NXP PMZ250UN,315
Technical Data Sheet (87.03KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The PMZ250UN,315 is a N-channel enhancement-mode FET in a plastic package using TrenchMOS® technology. It is suitable for use in driver circuits, load switching in portable appliances and DC-to-DC converter applications.
  • Profile 55% lower than SOT23
  • Lower ON-state resistance
  • Leadless package
  • Footprint 90% smaller than SOT23
  • Low threshold voltage
  • Fast switching
  • -55 to 150°C Junction temperature range

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
200mA
Drain Source Voltage Vds:
20V
On Resistance Rds(on):
0.25ohm
Rds(on) Test Voltage Vgs:
4.5V
Threshold Voltage Vgs:
700mV
Power Dissipation Pd:
2.5W
Transistor Case Style:
SOT-883
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Portable Devices;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000006