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NXP  PMZB290UNE  MOSFET Transistor, N Channel, 1 A, 20 V, 0.29 ohm, 4.5 V, 750 mV

NXP PMZB290UNE
Technical Data Sheet (953.43KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The PMZB290UNE is a N-channel enhancement-mode FET in a leadless ultra-small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, high-speed line driver, low-side load-switch and switching circuit applications.
  • Very fast switching
  • ESD protection up to 2kV
  • Low threshold voltage
  • Ultra-thin package profile of 0.37mm
  • -55 to 150°C Junction temperature range

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
1A
Drain Source Voltage Vds:
20V
On Resistance Rds(on):
0.29ohm
Rds(on) Test Voltage Vgs:
4.5V
Threshold Voltage Vgs:
750mV
Power Dissipation Pd:
715mW
Transistor Case Style:
SOT-883
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.00082

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