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NXP  PSMN016-100XS  MOSFET Transistor, N Channel, 32.1 A, 100 V, 0.013 ohm, 10 V, 3 V

NXP PSMN016-100XS
Technical Data Sheet (204.52KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The PSMN016-100XS is a N-channel MOSFET suitable for standard level gate drive. It is designed and qualified for use in a wide range of AC-to-DC power supply equipment, server power supplies, synchronous rectification and domestic equipment applications.
  • High efficiency due to low switching and conduction losses
  • Isolated package
  • -55 to 175°C Junction temperature range

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
32.1A
Drain Source Voltage Vds:
100V
On Resistance Rds(on):
0.013ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
3V
Power Dissipation Pd:
46.1W
Transistor Case Style:
TO-220F
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Communications & Networking;
  • Consumer Electronics;
  • Motor Drive & Control;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Y-Ex
Tariff No:
85412900
Weight (kg):
.002032

Associated Products