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NXP  PSMN1R7-60BS  MOSFET Transistor, N Channel, 120 A, 60 V, 0.00166 ohm, 10 V, 3 V

NXP PSMN1R7-60BS
Technical Data Sheet (229.43KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The PSMN1R7-60BS is a N-channel MOSFET suitable for standard level gate drive sources. It is designed and qualified for use in a wide range of load switching, server power supplies, DC-to-DC converters and domestic equipment applications.
  • High efficiency due to low switching and conduction losses
  • -55 to 175°C Junction temperature range

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
120A
Drain Source Voltage Vds:
60V
On Resistance Rds(on):
0.00166ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
3V
Power Dissipation Pd:
306W
Transistor Case Style:
TO-263
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Communications & Networking;
  • Consumer Electronics;
  • Motor Drive & Control;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Philippines

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Y-Ex
Tariff No:
85412900
Weight (kg):
.001396

Associated Products