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NXP  PSMN5R5-60YS  MOSFET Transistor, N Channel, 100 A, 60 V, 3.6 mohm, 10 V, 3 V

NXP PSMN5R5-60YS
Technical Data Sheet (251.83KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The PSMN5R5-60YS is a 60V standard level N-channel MOSFET using advanced TrenchMOS provides low RDS (on), low gate charge and high efficiency gains in switching power converters. Suitable for use in DC to DC converters, motor control and server power supplies applications.
  • 175°C Junction temperature
  • Improved mechanical and thermal characteristics

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
100A
Drain Source Voltage Vds:
60V
On Resistance Rds(on):
0.0036ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
3V
Power Dissipation Pd:
130W
Transistor Case Style:
SOT-669
No. of Pins:
4Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Motor Drive & Control;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Philippines

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Y-Ex
Tariff No:
85412900
Weight (kg):
.000183