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ON SEMICONDUCTOR  NGB8207BNT4G  IGBT Single Transistor, 20 A, 1.5 V, 165 W, 365 V, TO-263, 3 Pins

ON SEMICONDUCTOR NGB8207BNT4G
Technical Data Sheet (126.23KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Information

DC Collector Current:
20A
Collector Emitter Saturation Voltage Vce(on):
1.5V
Power Dissipation Pd:
165W
Collector Emitter Voltage V(br)ceo:
365V
Transistor Case Style:
TO-263
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Malaysia

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.00033

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