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ON SEMICONDUCTOR  NGD18N40ACLBT4G  IGBT Single Transistor, 18 A, 1.8 V, 115 W, 400 V, TO-252, 3 Pins

ON SEMICONDUCTOR NGD18N40ACLBT4G
Technical Data Sheet (87.08KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The NGD18N40ACLBT4G is a 400V N-channel Insulated Gate Bipolar Transistor (IGBT) designed for use in ignition, direct fuel injection or wherever high voltage and high current switching is required. The logic level IGBT features monolithic circuitry integrating ESD and overvoltage clamped protection for use in inductive coil drivers applications.
  • Ideal for coil on plug applications
  • Gate-emitter ESD protection
  • Temperature compensated gate-collector voltage clamp limits stress applied to load
  • Integrated ESD diode protection
  • New design increases unclamped inductive switching (UIS) energy per area
  • Low threshold voltage interfaces power loads to logic or microprocessor devices
  • Low saturation voltage
  • High pulsed current capability
  • Emitter ballasting for short-circuit capability

Product Information

DC Collector Current:
18A
Collector Emitter Saturation Voltage Vce(on):
1.8V
Power Dissipation Pd:
115W
Collector Emitter Voltage V(br)ceo:
400V
Transistor Case Style:
TO-252
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Malaysia

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.00033

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