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ON SEMICONDUCTOR  NTGS3443T1G  MOSFET Transistor, P Channel, 3.1 A, -20 V, 0.058 ohm, -4.5 V, -950 mV

ON SEMICONDUCTOR NTGS3443T1G
Technical Data Sheet (106.09KB) EN See all Technical Docs

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Product Overview

The NTGS3443T1G is a P-channel Power MOSFET offers -20V drain source voltage and -2.2A continuous drain current. It is suitable for power management in portable and battery-powered products, cellular and cordless telephones and PCMCIA cards.
  • Ultra-low RDS (ON)
  • Higher efficiency extending battery life
  • Miniature surface-mount package
  • -55 to 150°C Operating temperature range

Product Information

Transistor Polarity:
P Channel
Continuous Drain Current Id:
3.1A
Drain Source Voltage Vds:
-20V
On Resistance Rds(on):
0.058ohm
Rds(on) Test Voltage Vgs:
-4.5V
Threshold Voltage Vgs:
-950mV
Power Dissipation Pd:
2W
Transistor Case Style:
TSOP
No. of Pins:
6Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Portable Devices;
  • Consumer Electronics;
  • Power Management;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Malaysia

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000058

Alternatives

MOSFET Transistor, P Channel, -5.97 A, -20 V, 50 mohm, -4.5 V, -600 mV

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