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ROHM  2SK3018T106  MOSFET Transistor, N Channel, 100 mA, 30 V, 8 ohm, 4 V, 1.5 V

ROHM 2SK3018T106
Technical Data Sheet (72.33KB) EN See all Technical Docs

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Product Overview

The 2SK3018T106 is a N-channel silicon MOSFET offers 30V drain source voltage and ±100mA continuous drain current. It is suitable for use in interfacing, switching applications.
  • Low ON-resistance
  • Fast switching speed
  • 2.5V Low voltage drive makes this device ideal for portable equipment
  • Drive circuits can be simple
  • Parallel use is easy

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
100mA
Drain Source Voltage Vds:
30V
On Resistance Rds(on):
8ohm
Rds(on) Test Voltage Vgs:
4V
Threshold Voltage Vgs:
1.5V
Power Dissipation Pd:
200mW
Transistor Case Style:
SOT-323
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Power Management;
  • Portable Devices;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Japan

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.00003