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ROHM  IMZ1AT108  Bipolar Transistor Array, Dual, NPN, PNP, 50 V, 300 mW, 150 mA, 120 hFE, SOT-457

ROHM IMZ1AT108
Technical Data Sheet (81.50KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The IMZ1AT108 is a NPN-PNP general purpose Bipolar Transistor Array with epitaxial planar silicon structure. It has mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. The device integrating two transistors is available in ultra-compact package, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators and driver ICs.
  • Transistor elements are independent, eliminating interference
  • Mounting area can be cut in half
  • Ultra-compact complex digital transistor
  • Potential divider type
  • Small surface-mount package

Product Information

Transistor Polarity:
NPN, PNP
Collector Emitter Voltage V(br)ceo:
50V
Power Dissipation Pd:
300mW
DC Collector Current:
150mA
DC Current Gain hFE:
120hFE
Transistor Case Style:
SOT-457
No. of Pins:
6Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Motor Drive & Control;
  • Communications & Networking;
  • Portable Devices;
  • Industrial;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Japan

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412100
Weight (kg):
.000363

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