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TAIWAN SEMICONDUCTOR  TSM2323CX  MOSFET Transistor, P Channel, -4.7 A, -20 V, 0.031 ohm, -4.5 V, -400 mV

TAIWAN SEMICONDUCTOR TSM2323CX
Technical Data Sheet (278.93KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The TSM2323CX is a P-channel MOSFET offers -20V drain source voltage and -4.7A continuous drain current. It is suitable for use in load and PA switch applications.
  • Advance Trench process technology
  • High density cell design for ultra-low ON-resistance
  • -55 to 150°C Operating junction temperature range

Product Information

Transistor Polarity:
P Channel
Continuous Drain Current Id:
-4.7A
Drain Source Voltage Vds:
-20V
On Resistance Rds(on):
0.031ohm
Rds(on) Test Voltage Vgs:
-4.5V
Threshold Voltage Vgs:
-400mV
Power Dissipation Pd:
1.25W
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
Taiwan

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000008

Alternatives

MOSFET, P CHANNEL, -20V, -6A, SOT-23-3

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