Low

TXB0104RUTR - 

Voltage Level Translator, 4 Input, 4 ns, 1.2 V to 5.5 V, UQFN-12

TEXAS INSTRUMENTS TXB0104RUTR

Image is for illustrative purposes only. Please refer to product description.

Manufacturer Part No:
TXB0104RUTR
Order Code:
2335612RL
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
-40°C
:
-
:
Voltage Level Translator
:
85°C
:
4ns
:
12Pins
:
UQFN
:
-
:
-
:
1.2V
:
4
:
Cut Tape
:
5.5V
:
MSL 1 - Unlimited
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Product Overview

The TXB0104RUTR is a 4-bit Bidirectional Voltage-level Shifter with auto direction sensing and ±15kV ESD protect. This non-inverting translator uses two separate configurable power-supply rails. The A port is designed to track VCCA and accepts any supply voltage from 1.2 to 3.6V. The B port is designed to track VCCB and accepts any supply voltage from 1.65 to 5.5V. This allows for universal low-voltage bidirectional translation between any of the 1.2, 1.5, 1.8, 2.5, 3.3 and 5V voltage nodes. VCCA should not exceed VCCB. When the output-enable (OE) input is low, all outputs are placed in the high-impedance state. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down. To ensure the high-impedance state during power up or power down, OE should be tied to GND through a pull-down resistor. The minimum value of the resistor is determined by the current-sourcing capability of the driver.
  • 1.2 to 3.6V on A port and 1.65 to 5.5V on B port (VCCA <= VCCB)
  • VCC isolation feature - If either VCC input is at GND, all outputs are in the high-impedance state
  • OE input circuit referenced to VCCA
  • Low power consumption (5µA maximum ICC)
  • IOFF supports partial power-down-mode operation
  • Latch-up performance exceeds 100mA per JESD 78, class II
  • Green product and no Sb/Br

Applications

Communications & Networking, Portable Devices, Consumer Electronics, Computers & Computer Peripherals

Warnings

This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

Associated Products