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VISHAY  IRF740LCPBF  MOSFET Transistor, N Channel, 10 A, 400 V, 550 mohm, 10 V, 4 V

VISHAY IRF740LCPBF
VISHAY IRF740LCPBF
Technical Data Sheet (267.95KB) EN Technical Data Sheet (147.36KB) EN See all Technical Docs

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VISHAY IRF740LCPBF
VISHAY IRF740LCPBF

Product Overview

The IRF740LCPBF is a N-channel enhancement-mode Power MOSFET with ultra-low gate charge. This new low charge Power device achieves significantly lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS technology, allowing for reduced gate drive requirements and total system savings. In addition, reduced switching losses and improved efficiency are achievable in a variety of high frequency applications. Frequencies of a few MHz at high current are possible using the new low charge MOSFETs. This device improvements combined with the proven ruggedness and reliability that are characteristic of Power MOSFET offers the designer a new standard in power transistors for switching applications.
  • Repetitive avalanche rated
  • Reduced gate drive requirement
  • 30V Enhanced VGS Rating
  • Reduced CISS, COSS, CRSS
  • Extremely high frequency operation

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
10A
Drain Source Voltage Vds:
400V
On Resistance Rds(on):
0.55ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
4V
Power Dissipation Pd:
125W
Transistor Case Style:
TO-220AB
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
To Be Advised

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Applications

  • Industrial;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.002

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