Power MOSFET, N Channel, 5.5 A, 600 V, 750 mohm, 10 V, 4 V
Image is for illustrative purposes only. Please refer to product description.
- Low gate charge Qg results in simple drive requirement
- Improved gate, avalanche and dynamic dV/dt ruggedness
- Fully characterized capacitance and avalanche voltage and current
- High voltage isolation
Industrial, Power Management