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VISHAY  IRFR9014PBF.  MOSFET Transistor, P Channel, 5.1 A, -60 V, 500 mohm, -10 V, -4 V

VISHAY IRFR9014PBF.
Technical Data Sheet (1.09MB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The IRFR9014PBF is a third generation P-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The DPAK is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Power dissipation levels up to 1.5W are possible in typical surface-mount applications.
  • Dynamic dV/dt rating
  • Repetitive avalanche rated
  • Surface-mount

Product Information

Transistor Polarity:
P Channel
Continuous Drain Current Id:
5.1A
Drain Source Voltage Vds:
-60V
On Resistance Rds(on):
0.5ohm
Rds(on) Test Voltage Vgs:
-10V
Threshold Voltage Vgs:
-4V
Power Dissipation Pd:
25W
Transistor Case Style:
TO-252
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
To Be Advised

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Applications

  • Industrial;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Y-Ex
Tariff No:
85412900
Weight (kg):
.0004

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