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VISHAY  IRFU9120PBF.  MOSFET Transistor, P Channel, 5.6 A, -100 V, 600 mohm, -10 V, -4 V

VISHAY IRFU9120PBF.
Technical Data Sheet (1.07MB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The IRFU9120PBF is a third generation P-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The straight lead version is for through-hole mounting applications. Power dissipation levels up to 1.5W are possible in typical surface-mount applications.
  • Dynamic dV/dt rating
  • Straight lead
  • Repetitive avalanche rated

Product Information

Transistor Polarity:
P Channel
Continuous Drain Current Id:
5.6A
Drain Source Voltage Vds:
-100V
On Resistance Rds(on):
0.6ohm
Rds(on) Test Voltage Vgs:
-10V
Threshold Voltage Vgs:
-4V
Power Dissipation Pd:
42W
Transistor Case Style:
TO-251AA
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
To Be Advised

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Applications

  • Industrial;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
Malaysia

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Y-Ex
Tariff No:
85412900
Weight (kg):
.00635

Associated Products