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VISHAY  IRFZ14PBF  MOSFET Transistor, N Channel, 10 A, 60 V, 200 mohm, 10 V, 4 V

VISHAY IRFZ14PBF
VISHAY IRFZ14PBF
Technical Data Sheet (1.48MB) EN See all Technical Docs

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VISHAY IRFZ14PBF
VISHAY IRFZ14PBF

Product Overview

The IRFZ14PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is universally preferred for power dissipation levels to approximately 50W. The low thermal resistance of the package contributes to its wide acceptance throughout the industry.
  • Dynamic dV/dt rating
  • -55 to 175°C Operating temperature range
  • Ease of paralleling
  • Simple drive requirements

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
10A
Drain Source Voltage Vds:
60V
On Resistance Rds(on):
0.2ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
4V
Power Dissipation Pd:
36W
Transistor Case Style:
TO-220AB
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
To Be Advised

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Applications

  • Industrial;
  • Power Management;
  • Commercial

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.002

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MOSFET Transistor, N Channel, 12.8 A, 100 V, 0.142 ohm, 10 V, 4 V

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