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VISHAY  VS-40MT120UHAPBF  IGBT Array & Module Transistor, NPN, 80 A, 5.35 V, 463 W, 1.2 kV, MTP

VISHAY VS-40MT120UHAPBF
Technical Data Sheet (285.26KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The VS-40MT120UHAPBF is a half-bridge ultrafast NPT IGBT Module suitable for welding, UPS and SMPS applications. It features outstanding ZVS and hard switching operation, excellent current sharing in parallel operation and very low junction to case thermal resistance.
  • Positive VCE(on) temperature coefficient
  • Square RBSOA
  • HEXFRED® anti-parallel diodes with ultra-soft reverse recovery and low VF
  • Al2O₃ DBC
  • Very low stray inductance design for high speed operation
  • Rugged with ultrafast performance
  • Benchmark efficiency above 20kHz
  • Low EMI, requires less snubbing
  • Direct mounting to heat sink
  • PCB solderable terminals
  • UL approved file E78996
  • 10µs Short-circuit capability
  • 8 to 60kHz Speed

Product Information

Transistor Polarity:
NPN
DC Collector Current:
80A
Collector Emitter Saturation Voltage Vce(on):
5.35V
Power Dissipation Pd:
463W
Collector Emitter Voltage V(br)ceo:
1.2kV
Transistor Case Style:
MTP
No. of Pins:
12Pins
Operating Temperature Max:
150°C
Product Range:
-
SVHC:
To Be Advised

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Applications

  • Power Management;
  • Maintenance & Repair

Legislation and Environmental

Country of Origin:
Italy

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.098543

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