Low

VS-FB190SA10 - 

Bipolar (BJT) Single Transistor, N Channel, 190 A, 100 V, 0.0054 ohm, 10 V, 3.3 V

VISHAY VS-FB190SA10

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Manufacturer:
VISHAY VISHAY
Manufacturer Part No:
VS-FB190SA10
Order Code:
2114709
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
568W
:
150°C
:
190A
:
N Channel
:
3.3V
:
-
:
100V
:
10V
:
0.0054ohm
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Product Overview

The VS-FB190SA10 is a 100V N-channel Power MOSFET, high current density power MOSFET is paralleled into a compact, high power module providing the best combination of switching, ruggedized design and very low on-resistance. The isolated package is preferred for all commercial-industrial applications at power dissipation levels to approximately higher than 500W. The low thermal resistance and easy connection to the package contribute to its universal acceptance throughout the industry.
  • Fully isolated package
  • Fully avalanche rated
  • Dynamic dV/dt rating
  • Low drain to case capacitance
  • Low internal inductance
  • Easy to use and parallel

Applications

Power Management