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VISHAY  VS-FB190SA10  Bipolar (BJT) Single Transistor, N Channel, 190 A, 100 V, 0.0054 ohm, 10 V, 3.3 V

VISHAY VS-FB190SA10
Technical Data Sheet (277.29KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The VS-FB190SA10 is a 100V N-channel Power MOSFET, high current density power MOSFET is paralleled into a compact, high power module providing the best combination of switching, ruggedized design and very low on-resistance. The isolated package is preferred for all commercial-industrial applications at power dissipation levels to approximately higher than 500W. The low thermal resistance and easy connection to the package contribute to its universal acceptance throughout the industry.
  • Fully isolated package
  • Fully avalanche rated
  • Dynamic dV/dt rating
  • Low drain to case capacitance
  • Low internal inductance
  • Easy to use and parallel

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
190A
Drain Source Voltage Vds:
100V
On Resistance Rds(on):
0.0054ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
3.3V
Power Dissipation Pd:
568W
Operating Temperature Max:
150°C
Product Range:
-
SVHC:
To Be Advised

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Applications

  • Power Management

Legislation and Environmental

Country of Origin:
Philippines

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.039916

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