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VISHAY  VS-GB75SA120UP  IGBT Array & Module Transistor, NPN, 131 A, 3.3 V, 658 W, 1.2 kV, SOT-227

VISHAY VS-GB75SA120UP
Technical Data Sheet (122.95KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The VS-GB75SA120UP is an ultrafast IGBT Module features direct mounting on heat sink, easy to assemble and parallel. It is designed for increased operating efficiency in power conversion such as UPS, SMPS, welding and induction heating.
  • NPT generation V IGBT technology
  • Square RBSOA
  • Positive VCE(on) temperature coefficient
  • Fully isolated package
  • Very low internal inductance (<=5nH)
  • Low EMI, requires less snubbing
  • 8 to 60kHz Speed

Product Information

Transistor Polarity:
NPN
DC Collector Current:
131A
Collector Emitter Saturation Voltage Vce(on):
3.3V
Power Dissipation Pd:
658W
Collector Emitter Voltage V(br)ceo:
1.2kV
Transistor Case Style:
SOT-227
No. of Pins:
4Pins
Operating Temperature Max:
150°C
Product Range:
-
SVHC:
To Be Advised

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Applications

  • Power Management;
  • Maintenance & Repair;
  • HVAC;
  • Industrial

Legislation and Environmental

Country of Origin:
Czech Republic

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.009

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