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VISHAY  VS-GB75YF120N  IGBT Array & Module Transistor, NPN, 100 A, 3.8 V, 480 W, 1.2 kV, EconoPACK

VISHAY VS-GB75YF120N
Technical Data Sheet (215.20KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The VS-GB75YF120N is an IGBT Module features benchmark efficiency for SMPS appreciation in particular HF welding and direct mounting to heat sink space saving.
  • Square RBSOA
  • HEXFRED® low Qrr, low switching energy
  • Positive VCE(on) temperature coefficient
  • Copper base plate
  • Low stray inductance design
  • Rugged transient performance
  • Low EMI, requires less snubbing
  • PCB solderable terminals
  • Low junction to case thermal resistance
  • 8 to 30kHz Speed

Product Information

Transistor Polarity:
NPN
DC Collector Current:
100A
Collector Emitter Saturation Voltage Vce(on):
3.8V
Power Dissipation Pd:
480W
Collector Emitter Voltage V(br)ceo:
1.2kV
Transistor Case Style:
EconoPACK
No. of Pins:
35Pins
Operating Temperature Max:
150°C
Product Range:
-
SVHC:
To Be Advised

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Applications

  • Power Management;
  • Maintenance & Repair

Legislation and Environmental

Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.009

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