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VISHAY  SIB911DK-T1-GE3  Dual MOSFET, Dual P Channel, 2.6 A, -20 V, 0.242 ohm, 8 V, -1 V

VISHAY SIB911DK-T1-GE3
Technical Data Sheet (132.90KB) EN See all Technical Docs

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Product Information

Transistor Polarity:
Dual P Channel
Continuous Drain Current Id:
2.6A
Drain Source Voltage Vds:
-20V
On Resistance Rds(on):
0.242ohm
Rds(on) Test Voltage Vgs:
8V
Threshold Voltage Vgs:
-1V
Power Dissipation Pd:
3.1W
Transistor Case Style:
SC-75
No. of Pins:
6Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
To Be Advised

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.0025

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