Low

VISHAY  SIR662DP-T1-GE3  MOSFET Transistor, N Channel, 100 A, 60 V, 0.0022 ohm, 10 V, 1 V

VISHAY SIR662DP-T1-GE3
Technical Data Sheet (378.65KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The SIR662DP-T1-GE3 is a 60V N-channel TrenchFET® Power MOSFET. Suitable for use in synchronous rectification, primary side switch, amusement system, DC/DC converter and point of load converter circuits. The N-channel MOSFET for switching applications are now available with die on resistances around 1mR and with the capability to handle 85A.
  • Halogen-free according to IEC 61249-2-21 definition
  • 100% Rg Tested
  • 100% UIS Tested
  • Low Qg for high efficiency

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
100A
Drain Source Voltage Vds:
60V
On Resistance Rds(on):
0.0022ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
1V
Power Dissipation Pd:
104W
Transistor Case Style:
PowerPAK SO
No. of Pins:
8Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
To Be Advised

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Applications

  • Power Management;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Taiwan

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.0005

Associated Products