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VISHAY  SIR802DP-T1-GE3  MOSFET Transistor, N Channel, 30 A, 20 V, 0.0041 ohm, 10 V, 600 mV

VISHAY SIR802DP-T1-GE3
Technical Data Sheet (338.21KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The SIR802DP-T1-GE3 is a 20VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for DC-to-DC converter, low voltage drive and POL applications.
  • 100% Rg tested
  • 100% UIS tested
  • Halogen-free
  • -55 to 150°C Operating temperature range

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
30A
Drain Source Voltage Vds:
20V
On Resistance Rds(on):
0.0041ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
600mV
Power Dissipation Pd:
27.7W
Transistor Case Style:
PowerPAK SO
No. of Pins:
8Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
To Be Advised

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Applications

  • Industrial;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000333

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