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VISHAY  SIHG20N50C-E3  MOSFET Transistor, N Channel, 20 A, 500 V, 225 mohm, 10 V, 5 V

VISHAY SIHG20N50C-E3
Technical Data Sheet (180.05KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The SIHG20N50C-E3 is a 500V N-channel Power MOSFET with high power dissipation and high peak current capability.
  • Halogen-free according to IEC 61249-2-21 definition
  • Low figure of merit Ron X Qg
  • 100% Avalanche rated
  • dV/dt Ruggedness
  • Improved Trr/Qrr
  • Improved gate charge

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
20A
Drain Source Voltage Vds:
500V
On Resistance Rds(on):
0.225ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
5V
Power Dissipation Pd:
292W
Transistor Case Style:
TO-247
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
To Be Advised

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Applications

  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.00542