Reduced PricesOffersContact UsHelpTrack Orders
Register
0
0 ItemsUS$0.00
ex VAT
ex VAT

Fast & Ultrafast Recovery Rectifier Diodes:

7 Products Found
View
Buyer
Engineer
Manufacturer
Repetitive Peak Reverse Voltage
Average Forward Current
Diode Configuration
Forward Voltage Max
Reverse Recovery Time
Forward Surge Current
Operating Temperature Max
Diode Case Style
No. of Pins
Product Range
Qualification
Packaging
Filter(s) Applied
1 Filter(s) Selected
ComparePrice ForQuantity
VS-EPH3007L-N3
VISHAY VS-EPH3007L-N3
2989403

Data Sheet

RoHS

VISHAY
  1. Fast / Ultrafast Diode
  2. 650 V
  3. 30 A
  4. Single
  5. 2.1 V
  6. 33 ns
  7. 195 A
Each
1+
US$3.203
10+
US$2.854
100+
US$1.595
500+
US$1.541
1000+
US$1.474
Min: 1 / Mult: 1
650V
30A
Single
2.1V
33ns
195A
175°C
TO-247AD
2 Pin
-
-
VS-1EQH01-M3/H
VISHAY VS-1EQH01-M3/H
3774948RL

Data Sheet

RoHS

Date/Lot Code

VISHAY
  1. Fast / Ultrafast Diode
  2. 100 V
  3. 1 A
  4. Single
  5. 970 mV
  6. 33 ns
  7. 30 A
Each (Supplied on Cut Tape)
Re-Reel
Packaging Options
100+
US$0.182
500+
US$0.113
1000+
US$0.081
5000+
US$0.062
Min: 100 / Mult: 5
100V
1A
Single
970mV
33ns
30A
175°C
DO-219AD (MicroSMP)
2 Pin
FRED Pt Series
-
VS-1EQH01-M3/H
VISHAY VS-1EQH01-M3/H
3774948

Data Sheet

RoHS

Date/Lot Code

VISHAY
  1. Fast / Ultrafast Diode
  2. 100 V
  3. 1 A
  4. Single
  5. 970 mV
  6. 33 ns
  7. 30 A
Each (Supplied on Cut Tape)
Cut Tape
5+
US$0.418
10+
US$0.289
100+
US$0.182
500+
US$0.113
1000+
US$0.081
More Pricing...
Min: 5 / Mult: 5
100V
1A
Single
970mV
33ns
30A
175°C
DO-219AD (MicroSMP)
2 Pin
FRED Pt Series
-
STTH12T06DI
STMICROELECTRONICS STTH12T06DI
3366884

Data Sheet

RoHS

Date/Lot Code

STMICROELECTRONICS
  1. Fast / Ultrafast Diode
  2. 600 V
  3. 12 A
  4. Single
  5. 2.95 V
  6. 33 ns
  7. 90 A
Each
1+
US$2.935
10+
US$2.921
100+
US$1.930
500+
US$1.889
1000+
US$1.876
Min: 1 / Mult: 1
600V
12A
Single
2.95V
33ns
90A
175°C
TO-220AC
2 Pin
-
-
VS-E5TX1506S2LHM3
VISHAY VS-E5TX1506S2LHM3
3957592

Data Sheet

RoHS

Date/Lot Code

VISHAY
  1. Fast / Ultrafast Diode
  2. 600 V
  3. 15 A
  4. Single
  5. 2.1 V
  6. 33 ns
  7. 185 A
Each (Supplied on Cut Tape)
Cut Tape
1+
US$2.868
10+
US$2.104
100+
US$1.568
500+
US$1.353
1000+
US$1.144
Min: 1 / Mult: 1
600V
15A
Single
2.1V
33ns
185A
175°C
TO-263 (D2PAK)
2 Pin
FRED Pt G5 Series
AEC-Q101
VS-E5TX1506S2LHM3
VISHAY VS-E5TX1506S2LHM3
3957592RL

Data Sheet

RoHS

Date/Lot Code

VISHAY
  1. Fast / Ultrafast Diode
  2. 600 V
  3. 15 A
  4. Single
  5. 2.1 V
  6. 33 ns
  7. 185 A
Each (Supplied on Cut Tape)
Re-Reel
Packaging Options
100+
US$1.568
500+
US$1.353
1000+
US$1.144
Min: 100 / Mult: 1
600V
15A
Single
2.1V
33ns
185A
175°C
TO-263 (D2PAK)
2 Pin
FRED Pt G5 Series
AEC-Q101
UCU20D30
KYOCERA AVX UCU20D30
3290430

Data Sheet

RoHS

Date/Lot Code

KYOCERA AVX
  1. Fast / Ultrafast Diode
  2. 300 V
  3. 20 A
  4. Dual Common Cathode
  5. 1.3 V
  6. 33 ns
  7. 120 A
Each (Supplied on Cut Tape)
Cut Tape
1+
US$2.064
10+
US$1.876
100+
US$1.487
500+
US$1.233
Min: 1 / Mult: 1
300V
20A
Dual Common Cathode
1.3V
33ns
120A
175°C
TO-263LP
3 Pin
-
-
1-7 of 7 items
of 1 page(s)

Popular Suppliers

ONSEMI
NEXPERIA
VISHAY
STMICROELECTRONICS
MULTICOMP PRO
INFINEON
NXP
ROHM

New Semiconductors - Discretes

TP65H035G4YS - gallium nitride (GaN) FET
RENESAS
TP65H035G4YS - gallium nitride (GaN) FET
RENESAS
G3R60MT07K – Silicon Carbide MOSFET
GENESIC SEMICONDUCTOR
G3R60MT07K – Silicon Carbide MOSFET
GENESIC SEMICONDUCTOR
TK024N60Z1,S1F(S - Power MOSFET
TOSHIBA
TK024N60Z1,S1F(S - Power MOSFET
TOSHIBA
M3S SiC Series
ONSEMI
M3S SiC Series
ONSEMI
CoolSiC™ Trench MOSFET
INFINEON
CoolSiC™ Trench MOSFET
INFINEON
EconoDUAL™ 3 product family for medium power applications
INFINEON
EconoDUAL™ 3 product family for medium power applications
INFINEON
TK024N60Z1,S1F(S - Power MOSFET
TOSHIBA
TK024N60Z1,S1F(S - Power MOSFET
TOSHIBA
Nexperia E-Mode Power Gallium Nitride FET's (GaN FET's) for high & low voltage applications.
NEXPERIA
Nexperia E-Mode Power Gallium Nitride FET's (GaN FET's) for high & low voltage applications.
NEXPERIA
New onsemi 650v SiC MOSFETs
ONSEMI
New onsemi 650v SiC MOSFETs
ONSEMI
semi-disc-np1-nov-analog-devices-matched-bjt-arrays
ANALOG DEVICES
semi-disc-np1-nov-analog-devices-matched-bjt-arrays
ANALOG DEVICES
New Toshiba SiC Schottky Barrier Diodes
TOSHIBA
New Toshiba SiC Schottky Barrier Diodes
TOSHIBA
XPT series IGBT Thin-wafer Technology for snubber-less hard-switching applications
LITTELFUSE
XPT series IGBT Thin-wafer Technology for snubber-less hard-switching applications
LITTELFUSE
MPS Series SiC Schottky Diodes - 650V to 1.7KV
GENESIC SEMICONDUCTOR
MPS Series SiC Schottky Diodes - 650V to 1.7KV
GENESIC SEMICONDUCTOR
N-Channel Power MOSFET
INFINEON
N-Channel Power MOSFET
INFINEON
600 V, 30 A Trench field-stop IGBT with full-rated Silicon Diode
NEXPERIA
600 V, 30 A Trench field-stop IGBT with full-rated Silicon Diode
NEXPERIA
Norton Secured
BSI 9001
Visa
Mastercard
Trade Account