Silicon Carbide (SiC) MOSFETs & Modules

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MOSFET Module Configuration Channel Type Transistor Polarity Continuous Drain Current Id Drain Source Voltage Vds Drain Source On State Resistance On Resistance Rds(on) Transistor Case Style No. of Pins Rds(on) Test Voltage Gate Source Threshold Voltage Max Power Dissipation Pd Power Dissipation Operating Temperature Max Product Range
 
 
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SCT20N120
SCT20N120 - Silicon Carbide MOSFET, Single, N Channel, 20 A, 1.2 kV, 0.169 ohm, HiP247

2807234

Silicon Carbide MOSFET, Single, N Channel, 20 A, 1.2 kV, 0.169 ohm, HiP247

STMICROELECTRONICS

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Single N Channel - 20A 1.2kV 0.169ohm - HiP247 3Pins 20V 3.5V - 175W 200°C -
SCT3017ALGC11
SCT3017ALGC11 - Silicon Carbide MOSFET, Single, N Channel, 118 A, 650 V, 0.017 ohm, TO-247N

2947063

Silicon Carbide MOSFET, Single, N Channel, 118 A, 650 V, 0.017 ohm, TO-247N

ROHM

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Single N Channel - 118A 650V 0.017ohm - TO-247N 3Pins 18V 5.6V - 427W 175°C -
C3M0065100J
C3M0065100J - Silicon Carbide MOSFET, Single, N Channel, 35 A, 1 kV, 0.065 ohm, TO-263 (D2PAK)

2749950

Silicon Carbide MOSFET, Single, N Channel, 35 A, 1 kV, 0.065 ohm, TO-263 (D2PAK)

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Single N Channel - 35A 1kV 0.065ohm - TO-263 (D2PAK) 7Pins 15V 2.1V - 113.5W 150°C -
IMZ120R140M1HXKSA1
IMZ120R140M1HXKSA1 - Silicon Carbide MOSFET, Single, N Channel, 19 A, 1.2 kV, 0.14 ohm, TO-247

3223687

Silicon Carbide MOSFET, Single, N Channel, 19 A, 1.2 kV, 0.14 ohm, TO-247

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Single N Channel - 19A 1.2kV 0.14ohm - TO-247 4Pins 18V 4.5V - 94W 175°C -
C3M0021120D
C3M0021120D - Silicon Carbide MOSFET, Single, N Channel, 100 A, 1.2 kV, 0.021 ohm, TO-247

3257419

Silicon Carbide MOSFET, Single, N Channel, 100 A, 1.2 kV, 0.021 ohm, TO-247

WOLFSPEED

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- - - 100A 1.2kV 0.021ohm - - 3Pins 15V 2.5V - 469W 175°C -
MD200HFR120C2S
MD200HFR120C2S - Silicon Carbide MOSFET, Silicon Carbide, Half Bridge, Dual N Channel, 299 A, 1.2 kV, 0.0087 ohm

2986056

Silicon Carbide MOSFET, Silicon Carbide, Half Bridge, Dual N Channel, 299 A, 1.2 kV, 0.0087 ohm

STARPOWER

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Half Bridge Dual N Channel - 299A 1.2kV 0.0087ohm - Module -Pins 18V 5.6V - -mW 150°C -
SCT3080ALGC11
SCT3080ALGC11 - Silicon Carbide Power MOSFET, N Channel, 30 A, 650 V, 0.08 ohm, 18 V, 5.6 V

2678786

Silicon Carbide Power MOSFET, N Channel, 30 A, 650 V, 0.08 ohm, 18 V, 5.6 V

ROHM

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Single N Channel - 30A 650V 0.08ohm - TO-247N 3Pins 18V 5.6V - 134W 175°C -
NVHL040N120SC1
NVHL040N120SC1 - Silicon Carbide MOSFET, EliteSiC, Single, N Channel, 60 A, 1.2 kV, 0.056 ohm, TO-247

3464026

Silicon Carbide MOSFET, EliteSiC, Single, N Channel, 60 A, 1.2 kV, 0.056 ohm, TO-247

ONSEMI

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Single N Channel - 60A 1.2kV 0.056ohm - TO-247 3Pins 20V 4.3V - 348W 175°C -
NTBG160N120SC1
NTBG160N120SC1 - Silicon Carbide MOSFET, EliteSiC, Single, N Channel, 19.5 A, 1.2 kV, 0.16 ohm, TO-263HV (D2PAK)

3528497RL

Silicon Carbide MOSFET, EliteSiC, Single, N Channel, 19.5 A, 1.2 kV, 0.16 ohm, TO-263HV (D2PAK)

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Single N Channel N Channel 19.5A 1.2kV 0.16ohm 0.16ohm TO-263HV (D2PAK) 7Pins 20V 3V 136W 136W 175°C -
G3R45MT17K
G3R45MT17K - Silicon Carbide MOSFET, Single, N Channel, 61 A, 1.7 kV, 0.045 ohm, TO-247

3598624

Silicon Carbide MOSFET, Single, N Channel, 61 A, 1.7 kV, 0.045 ohm, TO-247

GENESIC SEMICONDUCTOR

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- - - 61A 1.7kV 0.045ohm - - 4Pins 15V 2.7V - 438W 175°C -
IMBG120R350M1HXTMA1
IMBG120R350M1HXTMA1 - Silicon Carbide MOSFET, Single, N Channel, 4.7 A, 1.2 kV, 0.35 ohm, TO-263 (D2PAK)

3582467

Silicon Carbide MOSFET, Single, N Channel, 4.7 A, 1.2 kV, 0.35 ohm, TO-263 (D2PAK)

INFINEON

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Single N Channel - 4.7A 1.2kV 0.35ohm - TO-263 (D2PAK) 7Pins 18V 4.5V - 65W 175°C -
SCT3040KLGC11
SCT3040KLGC11 - Silicon Carbide Power MOSFET, N Channel, 55 A, 1.2 kV, 0.04 ohm, 18 V, 5.6 V

2680147

Silicon Carbide Power MOSFET, N Channel, 55 A, 1.2 kV, 0.04 ohm, 18 V, 5.6 V

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Single N Channel - 55A 1.2kV 0.04ohm - TO-247N 3Pins 18V 5.6V - 262W 175°C -
SCT3080KLHRC11
SCT3080KLHRC11 - Silicon Carbide MOSFET, Single, N Channel, 31 A, 1.2 kV, 0.08 ohm, TO-247N

3052190

Silicon Carbide MOSFET, Single, N Channel, 31 A, 1.2 kV, 0.08 ohm, TO-247N

ROHM

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Single N Channel - 31A 1.2kV 0.08ohm - TO-247N 3Pins 18V 5.6V - 165W 175°C -
SCT3030ARC14
SCT3030ARC14 - Silicon Carbide MOSFET, Single, N Channel, 70 A, 650 V, 0.03 ohm, TO-247

3241768

Silicon Carbide MOSFET, Single, N Channel, 70 A, 650 V, 0.03 ohm, TO-247

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Single N Channel - 70A 650V 0.03ohm - TO-247 4Pins 18V 5.6V - 262W 175°C -
NVBG020N090SC1
NVBG020N090SC1 - Silicon Carbide MOSFET, EliteSiC, Single, N Channel, 112 A, 900 V, 0.02 ohm, TO-263 (D2PAK)

3367862

Silicon Carbide MOSFET, EliteSiC, Single, N Channel, 112 A, 900 V, 0.02 ohm, TO-263 (D2PAK)

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3367862RL in Re-reel

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Single N Channel - 112A 900V 0.02ohm - TO-263 (D2PAK) 7Pins 15V 2.6V - 477W 175°C -
G3R160MT12J
G3R160MT12J - Silicon Carbide MOSFET, Single, N Channel, 22 A, 1.2 kV, 0.16 ohm, TO-263 (D2PAK)

3598649

Silicon Carbide MOSFET, Single, N Channel, 22 A, 1.2 kV, 0.16 ohm, TO-263 (D2PAK)

GENESIC SEMICONDUCTOR

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- - - 22A 1.2kV 0.16ohm - - 7Pins 15V 2.69V - 128W 175°C -
BSM400D12P2G003
BSM400D12P2G003 - Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 400 A, 1.2 kV, Module

3573228

Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 400 A, 1.2 kV, Module

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Half Bridge Dual N Channel - 400A 1.2kV - - Module - - 4V - 2.45kW 150°C -
SCT3030ALGC11
SCT3030ALGC11 - Silicon Carbide Power MOSFET, N Channel, 70 A, 650 V, 0.03 ohm, 18 V, 5.6 V

2678783

Silicon Carbide Power MOSFET, N Channel, 70 A, 650 V, 0.03 ohm, 18 V, 5.6 V

ROHM

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Single N Channel - 70A 650V 0.03ohm - TO-247N 3Pins 18V 5.6V - 262W 175°C -
SCTW35N65G2V
SCTW35N65G2V - Silicon Carbide MOSFET, Single, N Channel, 45 A, 650 V, 0.045 ohm, TO-247

3387274

Silicon Carbide MOSFET, Single, N Channel, 45 A, 650 V, 0.045 ohm, TO-247

STMICROELECTRONICS

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Single N Channel - 45A 650V 0.045ohm - TO-247 3Pins 20V 3.2V - 240W 200°C -
NTBG040N120SC1
NTBG040N120SC1 - Silicon Carbide MOSFET, EliteSiC, Single, N Channel, 60 A, 1.2 kV, 0.04 ohm, TO-263HV (D2PAK)

3463999

Silicon Carbide MOSFET, EliteSiC, Single, N Channel, 60 A, 1.2 kV, 0.04 ohm, TO-263HV (D2PAK)

ONSEMI

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Single N Channel - 60A 1.2kV 0.04ohm - TO-263HV (D2PAK) 7Pins 20V 3V - 357W 175°C -
BSM400C12P3G202
BSM400C12P3G202 - Silicon Carbide MOSFET, Chopper, N Channel, 400 A, 1.2 kV, Module

3573227

Silicon Carbide MOSFET, Chopper, N Channel, 400 A, 1.2 kV, Module

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Chopper N Channel - 400A 1.2kV - - Module - - 5.6V - 1.57kW 150°C -
BSM300D12P3E005
BSM300D12P3E005 - Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 300 A, 1.2 kV, Module

3573226

Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 300 A, 1.2 kV, Module

ROHM

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Half Bridge Dual N Channel - 300A 1.2kV - - Module - - 5.6V - 1.26kW 150°C -
IMBG120R030M1HXTMA1
IMBG120R030M1HXTMA1 - Silicon Carbide MOSFET, Single, N Channel, 56 A, 1.2 kV, 0.03 ohm, TO-263 (D2PAK)

3582461

Silicon Carbide MOSFET, Single, N Channel, 56 A, 1.2 kV, 0.03 ohm, TO-263 (D2PAK)

INFINEON

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Single N Channel - 56A 1.2kV 0.03ohm - TO-263 (D2PAK) 7Pins 18V 4.5V - 300W 175°C -
IMBF170R450M1XTMA1
IMBF170R450M1XTMA1 - Silicon Carbide MOSFET, Single, N Channel, 9.8 A, 1.7 kV, 0.364 ohm, TO-263 (D2PAK)

3577330

Silicon Carbide MOSFET, Single, N Channel, 9.8 A, 1.7 kV, 0.364 ohm, TO-263 (D2PAK)

INFINEON

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Single N Channel - 9.8A 1.7kV 0.364ohm - TO-263 (D2PAK) 7Pins 15V 4.5V - 107W 175°C -
IMZA65R048M1HXKSA1
IMZA65R048M1HXKSA1 - Silicon Carbide MOSFET, Single, N Channel, 39 A, 650 V, 0.048 ohm, TO-247

3500948

Silicon Carbide MOSFET, Single, N Channel, 39 A, 650 V, 0.048 ohm, TO-247

INFINEON

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Single N Channel - 39A 650V 0.048ohm - TO-247 4Pins 18V 4.5V - 125W 150°C -