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NGTB30N120IHSWG

IGBT, 60 A, 2 V, 192 W, 1.2 kV, TO-247, 3 Pins

ONSEMI NGTB30N120IHSWG

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Manufacturer:
ONSEMI ONSEMI
Manufacturer Part No:
NGTB30N120IHSWG
Order Code:
2321667
Technical Datasheet:
NGTB30N120IHSWG   Datasheet
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Product Overview

The NGTB30N120IHSWG is an Insulated Gate Bipolar Transistor (IGBT) features a robust and field-stop (FS) Trench construction and provides superior performance in demanding switching applications, offering both low ON-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co-packaged free-wheeling diode with a low forward voltage.
  • Low saturation voltage using Trench with field-stop technology
  • Low switching loss - Reduces system power dissipation
  • Optimized for low case temperature in IH cooker application
  • Low gate charge
  • Low conduction loss

Applications

HVAC, Consumer Electronics, Power Management

Product Information

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:
60A

:
2V

:
192W

:
1.2kV

:
TO-247

:
3Pins

:
150°C

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-

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-

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-

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Technical Docs (2)

CAD Downloads

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CAD Models - Notice
CAD Models and drawings are provided to you on a revocable limited licence for your internal use only but remain the property of the manufacturer who retain all intellectual property rights and ownership. They are provided to assist you in decision making and as design guide but are not guaranteed to be error free, accurate or up to date and is not intended to be taken as advice.
Use of these CAD models and other options provided are downloaded and used entirely at your own risk and by continuing you confirm acceptance of the above.

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