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DMHT10H032LFJ-13
Dual MOSFET, N Channel
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | US$2.787 |
| 10+ | US$2.037 |
| 100+ | US$1.943 |
| 500+ | US$1.608 |
| 1000+ | US$1.514 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
US$2.79 (ex VAT)
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMHT10H032LFJ-13
Order Code3589313
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Continuous Drain Current Id6A
Drain Source Voltage Vds100V
Drain Source On State Resistance0.025ohm
On Resistance Rds(on)0.025ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation900mW
Power Dissipation Pd900mW
Operating Temperature Max150°C
Product Range-
SVHCNo SVHC (27-Jun-2024)
Technical Specifications
Transistor Polarity
N Channel
Continuous Drain Current Id
6A
Drain Source On State Resistance
0.025ohm
Rds(on) Test Voltage
10V
Power Dissipation
900mW
Operating Temperature Max
150°C
SVHC
No SVHC (27-Jun-2024)
Channel Type
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
0.025ohm
Gate Source Threshold Voltage Max
2.5V
Power Dissipation Pd
900mW
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000121
Product traceability