BTS436L2GATMA1

BTS436L2GATMA1 is a smart high-side power switch. It is an N-channel vertical power MOSFET with a charge pump, ground-referenced CMOS compatible input, and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. It provides embedded protective functions. It is used in applications such as µC compatible high-side power switches with diagnostic feedback for 5V, 12V, and 24V grounded loads, all types of resistive, inductive, and capacitive loads, most suitable for loads with high inrush currents, so as lamps, replace electromechanical relays, fuses, and discrete circuits.

• Very low standby current, CMOS compatible input, fast demagnetization of inductive loads
• Stable behaviour at undervoltage, wide operating voltage range, AEC qualified
• Logic ground independent from load ground, short circuit protection, overload protection
• Current limitation, thermal shutdown, operating voltage range from 4.75V to 41V
• Overvoltage protection (including load dump) with external resistor
• Reverse battery protection with external resistor, loss of ground and loss of Vbb protection
• Electrostatic discharge protection (ESD), diagnostic feedback with open drain output
• Open load detection in ON-state, feedback of thermal shutdown in ON-state
• On-state resistance is 35mohm typical, nominal load current is 9.8A typical
• Operating temperature range from -40°C to +150°C, TO-263-5 package