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IRG4BC10UDPBF
IGBT, IRG4, 8.5 A, 2.15 V, 38 W, 600 V, TO-220AB, 3 Pins
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRG4BC10UDPBF
Order Code1611638
Technical Datasheet
Continuous Collector Current8.5A
Collector Emitter Saturation Voltage2.15V
Power Dissipation38W
Collector Emitter Voltage Max600V
Transistor Case StyleTO-220AB
No. of Pins3Pins
Operating Temperature Max150°C
Transistor MountingThrough Hole
Product Range-
Product Overview
The IRG4BC10UDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It is optimized for high operating up to 80kHz in hard switching, <gt/>200kHz in resonant mode. Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation. IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations.
- High efficiency
Applications
Lighting, Alternative Energy, Power Management
Technical Specifications
Continuous Collector Current
8.5A
Power Dissipation
38W
Transistor Case Style
TO-220AB
Operating Temperature Max
150°C
Product Range
-
Collector Emitter Saturation Voltage
2.15V
Collector Emitter Voltage Max
600V
No. of Pins
3Pins
Transistor Mounting
Through Hole
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002041