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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRG4BC30KDPBF
Order Code8650390
Product RangeIRG4
Also Known AsSP001532644
Technical Datasheet
Continuous Collector Current28A
Collector Emitter Saturation Voltage2.21V
Power Dissipation100W
Collector Emitter Voltage Max600V
Transistor Case StyleTO-220AB
No. of Pins3Pins
Operating Temperature Max150°C
Transistor MountingThrough Hole
Product RangeIRG4
Product Overview
The IRG4BC30KDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. The HEXFRED™ diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses.
- Combines low conduction losses with high switching speed
- Tighter parameter distribution and higher efficiency than previous generations
- IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft recovery anti-parallel diodes
- Latest generation 4 IGBTs offer highest power density motor controls possible
Applications
Motor Drive & Control, Alternative Energy, Power Management, Consumer Electronics, Maintenance & Repair
Technical Specifications
Continuous Collector Current
28A
Power Dissipation
100W
Transistor Case Style
TO-220AB
Operating Temperature Max
150°C
Product Range
IRG4
Collector Emitter Saturation Voltage
2.21V
Collector Emitter Voltage Max
600V
No. of Pins
3Pins
Transistor Mounting
Through Hole
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002667