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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRG4BH20K-SPBF
Order Code1298569
Product RangeIRG4
Technical Datasheet
Continuous Collector Current11A
Collector Emitter Saturation Voltage3.17V
Power Dissipation60W
Collector Emitter Voltage Max1.2kV
Transistor Case StyleTO-263 (D2PAK)
No. of Pins3Pins
Operating Temperature Max150°C
Transistor MountingSurface Mount
Product RangeIRG4
Product Overview
The IRG4BH20K-SPBF is an Insulated Gate Bipolar Transistor combines low conduction losses with high switching speed. It feature latest generation design provides tighter parameter distribution and higher efficiency than previous generations. As a freewheeling diode recommend our HEXFRED™ ultrafast, ultra-soft recovery diodes for minimum EMI/noise and switching losses in the diode and IGBT.
- High short-circuit rating
- Latest generation 4 IGBT's offer highest power density motor controls possible
Applications
Consumer Electronics, Motor Drive & Control, Power Management
Technical Specifications
Continuous Collector Current
11A
Power Dissipation
60W
Transistor Case Style
TO-263 (D2PAK)
Operating Temperature Max
150°C
Product Range
IRG4
Collector Emitter Saturation Voltage
3.17V
Collector Emitter Voltage Max
1.2kV
No. of Pins
3Pins
Transistor Mounting
Surface Mount
Technical Docs (1)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00143