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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRG4PC50FDPBF
Order Code9105123
Product RangeIRG4
Also Known AsSP001545704
Technical Datasheet
Continuous Collector Current70A
Collector Emitter Saturation Voltage1.79V
Power Dissipation200W
Collector Emitter Voltage Max600V
Transistor Case StyleTO-247AC
No. of Pins3Pins
Operating Temperature Max150°C
Transistor MountingThrough Hole
Product RangeIRG4
Alternatives for IRG4PC50FDPBF
3 Products Found
Product Overview
The IRG4PC50FDPBF is an insulated gate Bipolar Transistor with ultrafast soft recovery diode, optimized for medium operating frequencies. Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3. IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations.
- ±20V Gate-emitter voltage
Applications
Motor Drive & Control
Technical Specifications
Continuous Collector Current
70A
Power Dissipation
200W
Transistor Case Style
TO-247AC
Operating Temperature Max
150°C
Product Range
IRG4
Collector Emitter Saturation Voltage
1.79V
Collector Emitter Voltage Max
600V
No. of Pins
3Pins
Transistor Mounting
Through Hole
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00567
Product traceability