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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRG4RC10SDPBF
Order Code8659559
Product RangeIRG4
Also Known AsSP001545958
Technical Datasheet
Continuous Collector Current14A
Collector Emitter Saturation Voltage1.7V
Power Dissipation38W
Collector Emitter Voltage Max600V
Transistor Case StyleTO-252AA
No. of Pins3Pins
Operating Temperature Max150°C
Transistor MountingSurface Mount
Product RangeIRG4
Product Overview
The IRG4RC10SDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. The IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations. Minimizes power dissipation at up to 3kHz PWM frequency in inverter drives, up to 4kHz in brushless DC drives. The HEXFRED™ diodes optimized for performance with IGBT. Minimized recovery characteristics require less/no snubbing.
- Tight parameter distribution
- High efficiency
- Optimized for specific application conditions
- Lower losses than MOSFET's conduction and diode losses
- 1.1V at 2A Typical extremely low voltage drop
Applications
Lighting, Power Management
Technical Specifications
Continuous Collector Current
14A
Power Dissipation
38W
Transistor Case Style
TO-252AA
Operating Temperature Max
150°C
Product Range
IRG4
Collector Emitter Saturation Voltage
1.7V
Collector Emitter Voltage Max
600V
No. of Pins
3Pins
Transistor Mounting
Surface Mount
Technical Docs (1)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000829