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GAN111-650WSBQ
Gallium Nitride (GaN) Transistor, 650 V, 21 A, 0.114 ohm, 4.9 nC, TO-247, Through Hole
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | US$11.135 |
| 5+ | US$10.707 |
| 10+ | US$10.264 |
| 50+ | US$8.710 |
| 100+ | US$8.335 |
| 250+ | US$7.946 |
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Multiple: 1
US$11.14 (ex VAT)
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoGAN111-650WSBQ
Order Code4550980
Technical Datasheet
Drain Source Voltage Vds650V
Continuous Drain Current Id21A
Drain Source On State Resistance0.114ohm
Typical Gate Charge4.9nC
Transistor Case StyleTO-247
Transistor MountingThrough Hole
No. of Pins3Pins
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.114ohm
Transistor Case Style
TO-247
No. of Pins
3Pins
Qualification
-
Continuous Drain Current Id
21A
Typical Gate Charge
4.9nC
Transistor Mounting
Through Hole
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00001
Product traceability