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GAN140-650EBEZ
Gallium Nitride (GaN) Transistor, 650 V, 17 A, 0.106 ohm, 3.5 nC, DFN8080, Surface Mount
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | US$6.526 |
| 10+ | US$5.548 |
| 100+ | US$4.543 |
| 500+ | US$3.846 |
| 1000+ | US$3.564 |
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Multiple: 1
US$6.53 (ex VAT)
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoGAN140-650EBEZ
Order Code4198480
Technical Datasheet
Drain Source Voltage Vds650V
Continuous Drain Current Id17A
Drain Source On State Resistance0.106ohm
Typical Gate Charge3.5nC
Transistor Case StyleDFN8080
Transistor MountingSurface Mount
No. of Pins8Pins
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.106ohm
Transistor Case Style
DFN8080
No. of Pins
8Pins
Qualification
-
Continuous Drain Current Id
17A
Typical Gate Charge
3.5nC
Transistor Mounting
Surface Mount
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000012
Product traceability