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ECH8657-TL-H
Dual MOSFET, N Channel, 35 V, 4.5 A, 59 mohm
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 24 week(s)
| Quantity | Price (ex VAT) |
|---|---|
| 3000+ | US$0.256 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
US$768.00 (ex VAT)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoECH8657-TL-H
Order Code3616838
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel35V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel4.5A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel59mohm
Drain Source On State Resistance P Channel-
Transistor Case StyleECH
No. of Pins8Pins
Power Dissipation N Channel1.5W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
8Pins
Power Dissipation P Channel
-
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
35V
Continuous Drain Current Id N Channel
4.5A
Drain Source On State Resistance N Channel
59mohm
Transistor Case Style
ECH
Power Dissipation N Channel
1.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.1
Product traceability