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BD788G
Bipolar (BJT) Single Transistor, General Purpose, PNP, 60 V, 4 A, 15 W, TO-225, Through Hole
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No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoBD788G
Order Code2101814
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage Max60V
Continuous Collector Current4A
Power Dissipation15W
Transistor Case StyleTO-225
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency50MHz
DC Current Gain hFE Min40hFE
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The BD788G is a 4A PNP bipolar complementary silicon Power Transistor is designed for lower power audio amplifier and low current, high speed switching applications.
- Complementary device
- Low collector-emitter sustaining voltage VCEO(sus) 60VDC minimum
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
PNP
Continuous Collector Current
4A
Transistor Case Style
TO-225
No. of Pins
3Pins
DC Current Gain hFE Min
40hFE
Product Range
-
Collector Emitter Voltage Max
60V
Power Dissipation
15W
Transistor Mounting
Through Hole
Transition Frequency
50MHz
Operating Temperature Max
150°C
Qualification
-
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000735
Product traceability