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GD1200HFY120C3S
IGBT Module, Half Bridge, 2.23 kA, 1.7 V, 8.196 kW, 150 °C, Module
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | US$461.067 |
| 5+ | US$456.029 |
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US$461.07 (ex VAT)
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Product Information
ManufacturerSTARPOWER
Manufacturer Part NoGD1200HFY120C3S
Order Code3912087
Technical Datasheet
IGBT ConfigurationHalf Bridge
Continuous Collector Current2.23kA
DC Collector Current2.23kA
Collector Emitter Saturation Voltage Vce(on)1.7V
Collector Emitter Saturation Voltage1.7V
Power Dissipation8.196kW
Power Dissipation Pd8.196kW
Junction Temperature Tj Max150°C
Operating Temperature Max150°C
Transistor Case StyleModule
IGBT TerminationStud
Collector Emitter Voltage V(br)ceo1.2kV
Collector Emitter Voltage Max1.2kV
IGBT TechnologyTrench
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Technical Specifications
IGBT Configuration
Half Bridge
DC Collector Current
2.23kA
Collector Emitter Saturation Voltage
1.7V
Power Dissipation Pd
8.196kW
Operating Temperature Max
150°C
IGBT Termination
Stud
Collector Emitter Voltage Max
1.2kV
Transistor Mounting
Panel
SVHC
To Be Advised
Continuous Collector Current
2.23kA
Collector Emitter Saturation Voltage Vce(on)
1.7V
Power Dissipation
8.196kW
Junction Temperature Tj Max
150°C
Transistor Case Style
Module
Collector Emitter Voltage V(br)ceo
1.2kV
IGBT Technology
Trench
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):1.5