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GD50HFX170C1S
IGBT Module, Half Bridge, 100 A, 1.85 V, 418 W, 150 °C, Module
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | US$46.418 |
| 5+ | US$44.528 |
| 10+ | US$42.304 |
| 50+ | US$41.031 |
| 100+ | US$39.235 |
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US$46.42 (ex VAT)
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Product Information
ManufacturerSTARPOWER
Manufacturer Part NoGD50HFX170C1S
Order Code3912067
Technical Datasheet
IGBT ConfigurationHalf Bridge
DC Collector Current100A
Continuous Collector Current100A
Collector Emitter Saturation Voltage1.85V
Collector Emitter Saturation Voltage Vce(on)1.85V
Power Dissipation Pd418W
Power Dissipation418W
Operating Temperature Max150°C
Junction Temperature Tj Max150°C
Transistor Case StyleModule
IGBT TerminationStud
Collector Emitter Voltage V(br)ceo1.7kV
Collector Emitter Voltage Max1.7kV
IGBT TechnologyTrench
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Technical Specifications
IGBT Configuration
Half Bridge
Continuous Collector Current
100A
Collector Emitter Saturation Voltage Vce(on)
1.85V
Power Dissipation
418W
Junction Temperature Tj Max
150°C
IGBT Termination
Stud
Collector Emitter Voltage Max
1.7kV
Transistor Mounting
Panel
SVHC
To Be Advised
DC Collector Current
100A
Collector Emitter Saturation Voltage
1.85V
Power Dissipation Pd
418W
Operating Temperature Max
150°C
Transistor Case Style
Module
Collector Emitter Voltage V(br)ceo
1.7kV
IGBT Technology
Trench
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.15