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GD75HFY120C1S
IGBT Module, Half Bridge, 117 A, 1.7 V, 380 W, 150 °C, Module
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | US$44.796 |
| 5+ | US$42.974 |
| 10+ | US$40.830 |
| 50+ | US$39.610 |
| 100+ | US$37.868 |
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US$44.80 (ex VAT)
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Product Information
ManufacturerSTARPOWER
Manufacturer Part NoGD75HFY120C1S
Order Code3912065
Technical Datasheet
IGBT ConfigurationHalf Bridge
Continuous Collector Current117A
DC Collector Current117A
Collector Emitter Saturation Voltage Vce(on)1.7V
Collector Emitter Saturation Voltage1.7V
Power Dissipation380W
Power Dissipation Pd380W
Junction Temperature Tj Max150°C
Operating Temperature Max150°C
Transistor Case StyleModule
IGBT TerminationStud
Collector Emitter Voltage V(br)ceo1.2kV
Collector Emitter Voltage Max1.2kV
IGBT TechnologyTrench
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Technical Specifications
IGBT Configuration
Half Bridge
DC Collector Current
117A
Collector Emitter Saturation Voltage
1.7V
Power Dissipation Pd
380W
Operating Temperature Max
150°C
IGBT Termination
Stud
Collector Emitter Voltage Max
1.2kV
Transistor Mounting
Panel
SVHC
To Be Advised
Continuous Collector Current
117A
Collector Emitter Saturation Voltage Vce(on)
1.7V
Power Dissipation
380W
Junction Temperature Tj Max
150°C
Transistor Case Style
Module
Collector Emitter Voltage V(br)ceo
1.2kV
IGBT Technology
Trench
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.15