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STGW40N120KD
IGBT, 80 A, 2.8 V, 240 W, 1.2 kV, TO-247, 3 Pins
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No Longer Manufactured
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTGW40N120KD
Order Code2344080
Technical Datasheet
Continuous Collector Current80A
Collector Emitter Saturation Voltage2.8V
Power Dissipation240W
Collector Emitter Voltage Max1.2kV
Transistor Case StyleTO-247
No. of Pins3Pins
Operating Temperature Max125°C
Transistor MountingThrough Hole
Product Range-
Product Overview
The STGW40N120KD is a 1200V short-circuit Rugged IGBT with ultrafast diode that utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behaviour. Improved switch-off energy spread versus increasing temperature result in reduced switching losses.
- Low on-losses
- High current capability
- Low gate charge
- 10µs Short-circuit withstand time
- Low VCE (sat) for reduced conduction losses
- Tight parameter distribution for design simplification and easy paralleling
Applications
Motor Drive & Control
Technical Specifications
Continuous Collector Current
80A
Power Dissipation
240W
Transistor Case Style
TO-247
Operating Temperature Max
125°C
Product Range
-
Collector Emitter Saturation Voltage
2.8V
Collector Emitter Voltage Max
1.2kV
No. of Pins
3Pins
Transistor Mounting
Through Hole
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.006695